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The Vishay 10ETS08S is a high-voltage silicon rectifier diode rated for 800 V reverse voltage and 10 A average forward current. It features a maximum forward voltage drop of 1.1 V at 25 °C and supports a non-repetitive surge current of 200 A. The component operates within a junction temperature range of -40 to 150 °C and utilizes glass passivation technology. It is available in the D2PAK (SMD-220) surface-mount package with a base cathode configuration.
Verify the specific ordering suffix to confirm the packaging format, as standard production units are supplied in tubes while TRL or TRR variants utilize tape and reel formats. Confirm lead-free status if required by assembly specifications. Ensure compatibility with recommended footprint dimensions and soldering techniques outlined in application note AN-994.
Select this component for applications requiring high voltage isolation and robust thermal performance in compact surface-mount designs. The device is suitable for use alongside Vishay High Power Products switches and output rectifiers sharing identical package outlines. Evaluate thermal resistance requirements based on the specific heatsink or PCB mounting conditions.
This part belongs to the 10ETS..S High Voltage Series from Vishay High Power Products. The series includes variants with different voltage ratings, such as 1000 V and 1200 V options, all maintaining the same 10 A current rating and package outline. The series is engineered specifically for input rectification tasks in industrial power supply environments.
Compatible substitutes within the same series include the 10ETS10S (1000 V) and 10ETS12S (1200 V), provided the system voltage requirements allow for higher ratings. These parts share identical electrical characteristics regarding current capacity and physical dimensions.