111-4095PBF

Overview

The Infineon Technologies 111-4095PBF is a single-channel low-side gate driver IC designed for driving N-Channel MOSFETs. It features a peak output current capability of 2A source and 7A sink, ensuring robust switching performance. The device operates with a supply voltage range of 12V to 18V and accepts logic input levels with VIL at 2V and VIH at 2.15V. This component is packaged in a tube format and is currently classified as obsolete.

Feature Summary

• Single-channel low-side configuration optimized for N-Channel MOSFET control
• High peak output drive strength with asymmetric source and sink currents
• Compatible standard logic voltage thresholds for interface flexibility

Applications

• Power management systems requiring single-switch control
• Motor drive applications utilizing N-Channel MOSFETs
• General-purpose power conversion circuits

Procurement Notes

Verify component obsolescence status prior to procurement planning. As the 111-4095PBF is marked obsolete, confirm availability through authorized distributors or secondary market channels. Ensure that any replacement strategy accounts for long-term supply chain stability and validates technical compatibility with existing system designs before finalizing acquisition decisions.

Selection Notes

Select this component only if legacy design compatibility is required and the specific low-side N-Channel MOSFET drive characteristics match the application needs. Consider the obsolete status when evaluating long-term project viability. Engineers should assess whether modern alternatives offer improved efficiency or availability while maintaining equivalent electrical specifications for the target power stage.

Part Context

This part belongs to Infineon's historical gate driver portfolio, originally developed under International Rectifier. It represents a discrete solution for controlling power switches in medium-power applications. The product line has been superseded by newer generations offering enhanced integration and performance metrics suitable for contemporary high-density power electronics designs.

Replacement Considerations

Consult official documentation for confirmed substitute part numbers. Verify pinout and electrical parameter equivalence to ensure seamless integration into existing PCB layouts without redesigning the gate drive circuitry or adjusting logic level interfaces.

FAQ

What is the driven configuration of the 111-4095PBF?

The 111-4095PBF utilizes a low-side driven configuration, specifically intended for controlling the ground-referenced terminal of an N-Channel MOSFET.

What are the peak output current capabilities?

The device provides a peak source current of 2A and a peak sink current of 7A, allowing for faster turn-off transitions compared to turn-on.