11LC020T-E/MNY

Overview

The Microchip Technology 11LC020T-E/MNY is a 2 Kbit (256 x 8) serial electrically erasable programmable read-only memory (EEPROM). It utilizes the UNI/O single I/O bus interface with Manchester encoding for clock and data transmission. The device operates within a supply voltage range of 2.5 V to 5.5 V and supports a maximum bit rate of 100 kbps. It features a 16-byte page-write buffer, self-timed write cycles, and block write protection capabilities. The component is housed in an 8-lead TDFN package and is rated for industrial temperature ranges.

Feature Summary

• Supports the patented UNI/O single I/O serial bus protocol using Manchester encoding on the SCIO pin.

Applications

• Interfacing with microcontrollers requiring low-pin-count non-volatile storage
• ASIC applications needing simple serial configuration data retention
• Systems utilizing discrete I/O lines for memory expansion

Procurement Notes

Verify that the ordering suffix 'MNY' corresponds to the TDFN package variant as specified in the datasheet selection table. Confirm the 'E' suffix indicates the extended automotive temperature range (-40°C to +125°C). Ensure the specific density matches the 2K organization requirements for your design.

Selection Notes

Select this part when a single-wire serial interface is required to minimize PCB trace count. The UNI/O protocol eliminates the need for separate clock and data lines. Consider the 16-byte page buffer size for write efficiency and verify that the 2.5V minimum operating voltage aligns with the system power rails.

Part Context

This component belongs to the 11LCXXX family of serial EEPROMs from Microchip Technology. The family includes various densities ranging from 1 Kbit to 16 Kbit, all sharing the same UNI/O interface architecture. The 11LC series specifically targets applications requiring operation down to 2.5V, distinguishing it from the 11AA series which supports lower voltages.

Replacement Considerations

Compatible substitutes within the same family include the 11LC010 (1K density) and 11LC040 (4K density), provided the memory organization fits the application needs. Other packages such as MSOP or SOIC may be used if the physical footprint allows, assuming the electrical characteristics remain identical.