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The Renesas Electronics 1338-31DCGI8 is an active Real-Time Clock (RTC) IC featuring a clock/calendar function and battery-backed non-volatile SRAM. It utilizes an I2C, 2-wire serial interface for communication. The device operates on a supply voltage range of 3.3V to 5.5V, with a backup battery voltage range of 1.3V to 3.7V. It provides 56 bytes of storage capacity and supports time formats including HH:MM:SS in both 12-hour and 24-hour modes, alongside a YY-MM-DD-dd date format. Key features include leap year compensation, NVSRAM retention, and a square wave output. The component is housed in an 8-SOIC package with dimensions of 4.9 x 3.9 x 1.5 mm and a pitch of 1.27 mm.
Verify the specific suffix 'DCGI8' corresponds to the SOIC-8 tape and reel packaging configuration. Confirm moisture sensitivity level (MSL 1) handling requirements prior to assembly. Ensure the design accommodates the specified operating temperature range of -40°C to +85°C. Cross-reference the manufacturer part number with distributor databases to confirm current availability status and lead times.
Select this component when a small form factor RTC with integrated non-volatile memory is required. The 8-pin SOIC package suits space-constrained designs. Verify that the system's I2C bus voltage levels are compatible with the 3.3V to 5.5V supply range. Consider the 5µA maximum current consumption at 3.63V to 5.5V for power budget calculations in battery-operated devices.
This part belongs to the Renesas 1338 series of real-time clocks. It is functionally similar to other variants such as the 1338D-31DVGI, differing primarily in package type and manufacturing lot specifications. The 1338 series is designed for low-power, high-reliability timing applications in industrial and commercial environments.
Direct substitutes within the same family include the 1338D-31DVGI, though package differences must be accounted for. Check for pin-compatible alternatives if board layout changes are permissible. Verify that any replacement maintains the same I2C interface and NVSRAM capacity.