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The GeneSiC Semiconductor 150K80A is a silicon standard recovery rectifier diode housed in the DO-8 package. It features a maximum repetitive peak reverse voltage of 800 V and an average forward current rating of 150 A. The device supports a non-repetitive peak forward surge current of 3740 A and exhibits a maximum forward voltage of 1.33 V. Operating temperatures range from -40 °C to +200 °C, with the case connected to the anode terminal.
Verify the specific datasheet version and manufacturer documentation to confirm electrical characteristics and mechanical dimensions. Ensure compatibility with mounting hardware and thermal interface materials for the DO-8 package. Confirm RoHS compliance status and lead-free specifications against current regulatory requirements before integration into designs.
Select this component for high-current applications requiring standard recovery characteristics. Evaluate thermal management solutions suitable for the 150 A continuous current rating. Consider the 800 V reverse voltage margin relative to circuit operating conditions. Verify that the single-phase configuration aligns with the system topology requirements.
This part belongs to the 150KR series of silicon standard recovery rectifiers manufactured by GeneSiC Semiconductor. The series utilizes the DO-8 stud mount package design. GeneSiC Semiconductor has been acquired by Navitas Semiconductor, which continues to support these silicon power device platforms alongside its silicon carbide technologies.
The maximum operating temperature is 200 °C.
The case is connected to the anode.