SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The GeneSiC Semiconductor 150KR100A is a silicon standard recovery diode housed in a DO-8 (DO-205AA) stud-mount package. It features a repetitive peak reverse voltage range of 200 V to 1000 V and a continuous forward current rating of 150 A. The device supports an operating temperature range from -55 °C to +150 °C with a maximum junction-to-case thermal resistance of 0.25 °C/W. It exhibits a forward voltage of 1.33 V at 150 A and a non-repetitive surge current capability of 3740 A.
Verify the specific voltage suffix (e.g., 200, 400, 600, 800, or 1000) required for your application, as the base part number covers a voltage range. Confirm whether the 'R' variant with reversed polarity (anode stud) is needed. Ensure mounting hardware matches the 3/8-24 UNF thread specification on the DO-8 package.
Select this component when high current capacity and ruggedness are prioritized over switching speed. The standard recovery characteristics make it suitable for lower frequency applications where fast switching is not critical. Evaluate thermal management requirements based on the 0.25 °C/W junction-to-case resistance to maintain safe operating temperatures under load.
This device belongs to the 150K(R) series of silicon standard recovery diodes manufactured by GeneSiC Semiconductor. The series offers various voltage ratings within the same physical footprint, allowing for design flexibility. The DO-8 package provides a compact solution for high-power applications requiring stud mounting.
Cross-reference with other manufacturers offering DO-8 packaged silicon standard recovery diodes with equivalent 150 A current and matching voltage ratings. Verify that replacement parts meet the same thermal resistance and surge current specifications.