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The part number 16-3636-01 does not correspond to a specific Infineon Technologies component in the provided documentation. The available data references the IRLU3636, which is a 60V single N-channel power MOSFET in an I-Pak (TO-251) package. Key electrical parameters for the IRLU3636 include a maximum drain-source voltage of 60V, a continuous drain current of 99A at 25°C, and a maximum on-resistance of 8.3mΩ at 4.5V gate drive. It features a typical total gate charge of 33nC and a junction temperature range up to 175°C.
Verify the exact part number against official Infineon databases before procurement. The provided identifier may be a distributor-specific code or obsolete reference. Confirm compatibility with the IRLU3636 specifications if substitution is considered. Ensure sourcing from authorized channels to guarantee authenticity and traceability.
Select based on voltage and current requirements matching the 60V and 99A ratings. Consider the I-Pak package for through-hole mounting needs. Evaluate thermal management capabilities given the 1.05 K/W junction-to-case thermal resistance. Verify gate drive compatibility with the specified threshold voltages.
This component belongs to the power MOSFET category, specifically designed for high-current switching applications. It utilizes planar technology optimized for low on-resistance and robust performance. The device is suitable for industrial and consumer electronics requiring reliable power handling in compact form factors.
Direct substitutes must match the 60V VDS, 99A ID, and TO-251 package. Check pinout compatibility and thermal characteristics. Verify that alternative devices meet the same RDS(on) and Qg specifications for equivalent switching performance.