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Product Detailed Parameters
- Description：JFET P-CH 30V 8DFN
- Series：174DFN
- Mfr：Linear Integrated Systems, Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：125 Ohms
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 135°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-VFDFN Exposed Pad
- Supplier Device Package：8-DFN (2x2)
- Grade：-
- Qualification：-
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Overview
The 175 DFN 8L ROHS is a P-channel Junction Field-Effect Transistor (JFET) manufactured by Linear Integrated Systems, Inc. It features a drain-source voltage rating of 30 V and a maximum power dissipation of 350 mW. The device is housed in an 8-DFN (2x2) surface-mount package. Key electrical characteristics include a gate-source cutoff voltage of 300 mV at 10 nA and a maximum input capacitance of 4.5 pF at 15 V. It operates within a temperature range of -55°C to 150°C TJ.
Feature Summary
- Single P-channel JFET switch configuration
- Surface mount 8-DFN (2x2) package for compact integration
- High breakdown voltage capability of 30 V
- Low input capacitance suitable for signal applications
Applications
- Analog signal switching circuits
- Low-noise preamplifier stages
- Impedance matching buffers
- Precision analog multiplexing
Procurement Notes
Verify the specific suffix and packaging variant when ordering, as distribution channels may list different tape and reel or cut tape options. Confirm RoHS compliance status matches project requirements. Ensure the supplier provides the official datasheet from Linear Integrated Systems, Inc. to validate pinout and electrical parameters against the specific batch received.
Selection Notes
Select this component for applications requiring low noise and high input impedance in a small footprint. Consider the 30 V breakdown limit and 350 mW power dissipation constraints. Evaluate the 125 ohms on-resistance if used as a switch. Compare against N-channel alternatives if polarity requirements differ. Ensure thermal management supports the specified junction temperature range.
Part Context
This part belongs to the family of discrete JFETs offered by Linear Integrated Systems, Inc. designed for precision analog applications. It complements other variants like the LSBF510 and 4391 DFN 8L ROHS, which offer N-channel configurations or different voltage ratings. These components are typically used in high-performance audio, instrumentation, and communication equipment where signal integrity is critical.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Users must consult manufacturer cross-reference guides or engineering change notices for verified equivalents.
