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The SMC Diode Solutions 1C5711 is a silicon Schottky rectifier die designed for high-efficiency applications. It features a working peak reverse voltage of 50 V and a non-repetitive peak reverse voltage of 70 V. The device supports an average forward current of 1 mA with a 50% duty cycle rectangular waveform. Electrical characteristics include a maximum forward voltage drop of 0.41 V at 1 mA and 1.00 V at 15 mA, alongside a reverse current of 200 nA at 50 V. Junction capacitance is limited to 2 pF at 0 V bias. The junction temperature range spans from -55°C to 125°C, with storage temperatures up to 150°C.
Verify the specific suffix (e.g., AG) against the manufacturer's latest documentation to confirm mechanical dimensions and metalization specifications. Confirm that the bare die format aligns with the intended assembly process. Ensure thermal management strategies accommodate the specified junction temperature limits during operation. Cross-reference the datasheet revision date to validate all electrical parameters before finalizing component selection.
Select this component for circuits requiring minimal forward voltage drop and low reverse leakage in compact form factors. The bare die configuration necessitates careful consideration of mounting techniques and thermal dissipation paths. Evaluate the 1 mA average forward current rating against peak load requirements to ensure reliable operation within the specified junction temperature range.
This component belongs to the silicon Schottky rectifier category, specifically engineered as a bare die rather than a packaged discrete device. It is manufactured by SMC Diode Solutions, which produces semiconductor devices including diodes and MOSFETs. The product line emphasizes high efficiency and reliability through features like guard rings and stable packaging characteristics.
Public confirmed substitute part numbers are not available in the provided source material.