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The SMC Diode Solutions 1C5822 is a silicon Schottky rectifier die designed for high-efficiency power conversion. It features a maximum repetitive reverse voltage of 40 V and supports an average forward current of 3 A under specified duty cycles. The device exhibits very low forward voltage drops, ranging from 0.38 V at 1 A to 0.70 V at 9.4 A. Electrical characteristics include a maximum reverse leakage current of 1.5 mA and a junction capacitance of 265 pF. The component operates within a junction temperature range of -55°C to +125°C.
Verify the specific metalization configuration required for the application, as the standard part utilizes an aluminum top and silver bottom. Ordering suffixes such as AG, BB, BG, GG, or GB modify the top and bottom metallization layers. Confirm that the bare die format aligns with the assembly capabilities of the target manufacturing process before finalizing procurement.
Select this component when low forward voltage drop is critical for minimizing power loss in high-efficiency designs. Ensure the thermal management system can handle the specified thermal impedance of 2.5 °C/W. Verify that the 40 V reverse voltage rating provides adequate margin for the peak inverse voltage present in the circuit. Consider the surge capacity requirements against potential half-sine wave transient events.
This component belongs to the 1C582x series of silicon Schottky rectifier dies manufactured by SMC Diode Solutions. The series includes variants with different voltage ratings: 1C5820 (20 V), 1C5821 (30 V), and 1C5822 (40 V). These bare dies are intended for integration into custom packages or direct mounting in power modules rather than standalone surface-mount applications.
Public confirmed substitute part numbers are not available in the provided documentation.