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The 1E4G is a glass passivated ultra-fast recovery rectifier diode manufactured by SMC Diode Solutions. It features a maximum repetitive peak reverse voltage of 200 V and an average forward rectified current of 1 A. The device utilizes the R-1 axial through-hole package. Key electrical characteristics include a maximum reverse recovery time of 35 ns and a peak non-repetitive surge current capability of 30 A. The component operates within a junction temperature range of -65°C to 150°C.
Verify the specific suffix 'G' indicates RoHS compliance when sourcing. Confirm the manufacturer is SMC Diode Solutions, as generic part numbers may exist across multiple vendors. Ensure the R-1 package dimensions match the target PCB footprint before finalizing procurement orders.
Select this component for applications requiring fast switching speeds where standard rectifiers exhibit excessive reverse recovery losses. The 200 V rating suits low-voltage DC bus applications. Consider the 1 A current limit for power dissipation constraints in the chosen thermal environment.
This diode belongs to the series of glass-passivated ultra-fast recovery rectifiers offered by SMC Diode Solutions. These components are designed to replace slower silicon rectifiers in modern high-efficiency power electronics, offering improved dynamic performance while maintaining robust mechanical reliability through axial packaging.
Substitutes must match the 200 V reverse voltage, 1 A forward current, and approximately 35 ns reverse recovery time. Verify that alternative packages maintain compatible pin spacing for direct board replacement without layout modifications.