1EBN1001AEXUMA1

$2.87

Description：IC GATE DRVR HI/LOW SIDE 14SOIC
Series：EiceDRIVER™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8d12934f41f1 Category: Gate Drivers Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IC GATE DRVR HI/LOW SIDE 14SOIC
Series：EiceDRIVER™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Driven Configuration：High-Side or Low-Side
Channel Type：Single
Number of Drivers：1
Gate Type：IGBT, MOSFET (N-Channel, P-Channel)
Voltage - Supply：13V ~ 18V
Logic Voltage - VIL, VIH：1.5V, 3.5V
Current - Peak Output (Source, Sink)：-
Input Type：-
Rise / Fall Time (Typ)：50ns, 90ns
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：14-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package：PG-DSO-14-43
Grade：Automotive
Qualification：AEC-Q100
High Side Voltage - Max (Bootstrap)：1200 V

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1EBN1001AEXUMA1

Overview

The Infineon Technologies 1EBN1001AEXUMA1 is a single-channel high-side gate driver booster designed for automotive applications. It operates with a supply voltage range of 13 V to 18 V and delivers peak output currents of +/- 15 A. The device features propagation delays of up to 10 ns, rise times of 50 ns, and fall times of 90 ns. It supports IGBT classes up to 650 V/800 A and 1200 V/400 A. Operating temperatures range from -40°C to +150°C (TJ). The component is housed in a PG-DSO-14 package and holds AEC-Q100 qualification.

Feature Summary

Single-channel high-side gate driver booster topology
Automotive grade AEC-Q100 qualification
High peak output current capability of +/- 15 A
Fast switching performance with low propagation delay

Applications

IGBT gate driving for automotive traction inverters
MOSFET gate driving for electric vehicle power stages
High voltage automotive power conversion systems

Procurement Notes

Verify the specific ordering suffix to ensure compatibility with required packaging formats. Confirm that the component meets the necessary automotive quality standards for the intended application environment. Check for any design-in restrictions or recommended companion components specified in the official documentation.

Selection Notes

Select this component when a non-isolated high-side booster is required to drive IGBTs or MOSFETs in automotive environments. Ensure the control signal logic levels are compatible with CMOS inputs. Verify that the thermal management solution supports the specified junction temperature range during operation.

Part Context

This part belongs to the EiceDRIVER family of isolated gate driver ICs for EV applications. It functions as a booster stage, typically paired with an isolated driver to provide sufficient current for switching high-power devices. The series is optimized for reliability and performance in demanding automotive power electronics.