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Product Detailed Parameters
- Description：1ED21271S65FXUMA1
- Series：1ED21x7x
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration：High-Side
- Channel Type：Single
- Number of Drivers：1
- Gate Type：SiC MOSFET
- Voltage - Supply：7.2V ~ 22V
- Logic Voltage - VIL, VIH：0.8V, 2.4V
- Current - Peak Output (Source, Sink)：4A, 4A
- Input Type：Non-Inverting
- Rise / Fall Time (Typ)：12ns, 12ns
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：PG-DSO-8
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：650 V
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Overview
The Infineon Technologies 1ED21271S65FXUMA1 is a high-side gate driver IC from the 1ED21x7x family, designed for industrial applications. It features a maximum blocking voltage of +650 V and delivers an output source/sink current of +4 A/-4 A. The device utilizes Infineon thin-film-SOI technology and supports a maximum supply voltage of 25 V. Key electrical parameters include a propagation delay of 55 ns, rise/fall times of 12 ns, and UVLO thresholds at 7.2 V (On) and 6.8 V (Off) for both VBS and VCC. It operates within an input Vcc range of 8 V to 22 V.
Feature Summary
- Integrates overcurrent protection (OCP) for enhanced fault management.
- Includes a multi-function RCIN/Fault/Enable (RFE) pin for flexible control.
- Features an integrated bootstrap diode (BSD) to simplify external component requirements.
Applications
- Interleaved Totem Pole Power Factor Correction (PFC) topologies
- Industrial power conversion systems
- High-voltage switching applications requiring functional isolation
Procurement Notes
Verify the specific suffix 'XUMA1' against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with PG-DSO-8 footprint requirements during PCB layout. Cross-reference the latest datasheet version for any updates to absolute maximum ratings or thermal characteristics before finalizing procurement orders.
Selection Notes
Select this component for high-side driving applications requiring robust overcurrent protection and integrated bootstrap functionality. The 650 V blocking voltage and 4 A drive current make it suitable for SiC and GaN devices in medium-power industrial converters. Consider the non-inverting configuration and SOI-based isolation when designing control interfaces.
Part Context
This part belongs to the 1ED21x7x family of 650 V high-side gate drivers. The family is characterized by Infineon's thin-film-SOI technology, offering functional isolation and compact design solutions. These drivers are engineered for industrial quality grades, supporting reliable operation in demanding power electronics environments.
Replacement Considerations
Consult the official 1ED21x7x family datasheet for confirmed substitute part numbers within the same series. Verify pinout compatibility and electrical parameter equivalence before substituting.
