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Product Detailed Parameters
- Description：1ED2127S65FXUMA1
- Series：1ED21x7x
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration：High-Side
- Channel Type：Single
- Number of Drivers：1
- Gate Type：IGBT, SiC MOSFET
- Voltage - Supply：10V ~ 22V
- Logic Voltage - VIL, VIH：0.8V, 2.4V
- Current - Peak Output (Source, Sink)：4A, 4A
- Input Type：Non-Inverting
- Rise / Fall Time (Typ)：12ns, 12ns
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：PG-DSO-8
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：650 V
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Overview
The Infineon Technologies 1ED2127S65FXUMA1 is a high-side gate driver utilizing thin-film-SOI technology. It features a maximum blocking voltage of +650 V and an output source/sink current of +4 A/-4 A. The device operates with a maximum supply voltage of 25 V and is housed in a PG-DSO-8 package. Key timing parameters include a rise time of 12 ns, a fall time of 12 ns, and a maximum propagation delay of 410 ns. Power dissipation is rated at 625 mW.
Feature Summary
- Utilizes Infineon thin-film-SOI technology for robust performance
- Supports high-side driving applications with up to 650 V blocking voltage
- Provides symmetrical output currents of +4 A source and -4 A sink
Applications
- Driving IGBT power switches
- Driving SiC MOSFET power switches
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct configuration. Confirm that the component meets all required electrical specifications for the target application environment. Cross-reference the datasheet revision history to validate parameter consistency before finalizing procurement decisions.
Selection Notes
Select this component for non-isolated high-side switching requirements where a 650 V blocking capability is necessary. The 4 A output current rating suits moderate load applications. Ensure the control signal interface aligns with the driver's input specifications and that the thermal design accommodates the specified power dissipation limits.
Part Context
This part belongs to the 1ED21x7x series of 650V high-side gate drivers from Infineon. It is designed for industrial motor drives and power supplies. The series leverages thin-film-SOI technology to provide reliable isolation characteristics within a compact surface-mount package suitable for automated assembly processes.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Generic replacements may not match the specific thin-film-SOI technology or exact timing parameters.
