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The Infineon Technologies 1ED3123MC12HXUMA1 is a single-channel isolated gate driver from the EiceDRIVER™ 1ED-X3 Compact family. It features galvanic isolation with reinforced insulation rated at 5.7 kV (rms) and supports a voltage level of 2300 V. The device provides high peak output currents of 14 A sink and 13.5 A source, enabling fast switching with propagation delays of 90 ns and rise/fall times of 30 ns. It operates within an input supply range of 3.1 V to 17 V and includes independent outputs with UVLO thresholds of 8 V for the bootstrap supply and 3.1 V/2.5 V for the VCC supply. Packaged in PG-DSO-8, it functions reliably between -40°C and +125°C.
Verify the complete part number including the suffix to ensure correct packaging configuration. Confirm that the specific variant matches the required isolation certification and package type for your design. Cross-reference official datasheets for thermal resistance and pinout details before finalizing procurement specifications.
Select this component for applications requiring high current drive capability and robust galvanic isolation. Ensure the external circuitry supports the specified UVLO thresholds and that the PCB layout accommodates the PG-DSO-8 package dimensions. Verify compatibility with the target silicon carbide or IGBT switches regarding voltage ratings and switching speeds.
This component belongs to the Infineon EiceDRIVER™ 1ED-X3 Compact series, designed specifically for driving power semiconductors like SiC MOSFETs and IGBTs. The family emphasizes compact form factors while maintaining high reliability and performance metrics suitable for demanding industrial and automotive environments.
Check for other variants within the 1ED31xxMC12H family that offer different current ratings or propagation delays. Ensure any substitute maintains equivalent isolation voltage ratings and package compatibility.