1ED3251MC12HXUMA1

1ED3251MC12HXUMA1

$2.29
  • Description:DGT ISO 5.7KV 1CH GT DVR DSO8-66
  • Series:EiceDRIVER™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:fa11091af3cf Category: Brand:

  
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Product Detailed Parameters

  • Description:DGT ISO 5.7KV 1CH GT DVR DSO8-66
  • Series:EiceDRIVER™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:Magnetic Coupling
  • Number of Channels:1
  • Voltage - Isolation:5700Vrms
  • Propagation Delay tpLH / tpHL (Max):110ns, 110ns
  • Pulse Width Distortion (Max):5ns
  • Rise / Fall Time (Typ):9ns, 8.5ns
  • Current - Output High, Low:9A, 18A
  • Current - Peak Output:18A
  • Voltage - Forward (Vf) (Typ):-
  • Voltage - Output Supply:10V ~ 35V
  • Grade:-
  • Qualification:-
  • Operating Temperature:-40°C ~ 125°C
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package:PG-DSO-8-66
  • Common Mode Transient Immunity (Min):200kV/µs
  • Approval Agency:UL, VDE
  • Current - DC Forward (If) (Max):-

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1ED3251MC12HXUMA1

Overview

The Infineon Technologies 1ED3251MC12HXUMA1 is a single-channel isolated gate driver from the EiceDRIVER X3 family, designed for high-performance power electronics. It features magnetic coupling technology providing robust isolation and high common-mode transient immunity. The device delivers a peak output current of 4 A to drive silicon carbide (SiC) or gallium nitride (GaN) switches. It operates with a supply voltage range of 3.1 V to 17 V on the primary side and supports secondary supply voltages up to 32 V. Key timing parameters include rise and fall times of approximately 20 ns, with propagation delays typically under 50 ns. The component is housed in an 8-lead PG-LDSO package, suitable for surface-mount applications.

Feature Summary

  • Utilizes magnetic coupling technology for galvanic isolation, eliminating the need for external bootstrap capacitors.
  • Optimized for driving wide-bandgap semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN).
  • Provides high common-mode transient immunity to withstand rapid voltage changes in switching circuits.
  • Integrates active Miller clamp functionality to prevent unintended turn-on during high dv/dt events.

Applications

  • High-frequency inverters for electric vehicle (EV) traction drives.
  • Industrial motor drives requiring fast switching speeds.
  • Uninterruptible power supplies (UPS) systems.
  • Solar micro-inverters and string inverters.

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and temperature grade specifications. Confirm that the requested part number matches the exact isolation voltage and pinout requirements for the target application design. Cross-reference the component revision history to ensure compatibility with existing PCB layouts and assembly processes.

Selection Notes

Select this component when designing circuits that require high-speed switching of SiC or GaN devices with minimal delay skew. The integrated active Miller clamp simplifies layout by reducing sensitivity to parasitic capacitance. Ensure the control logic interface voltage levels are compatible with the driver's input thresholds before integration into the system architecture.

Part Context

This model belongs to the Infineon EiceDRIVER X3 series, which represents a generation of isolated gate drivers optimized for modern power semiconductor technologies. The series emphasizes compactness and reliability through magnetic coupling, offering a solution that reduces component count and improves thermal performance compared to traditional optocoupler-based designs.

Replacement Considerations

Direct replacements within the same family include the 1ED3250MC12HXUMA1, which offers similar characteristics but may differ in specific current drive capabilities or pin configuration. Always consult the official replacement guide to verify electrical parameter equivalence and mechanical footprint compatibility before substitution.

FAQ

What is the typical common-mode transient immunity (CMTI) of the 1ED3251MC12HXUMA1?

The device provides a minimum common-mode transient immunity of 150 kV/µs, ensuring reliable operation in high-noise environments typical of SiC and GaN applications.

Does the 1ED3251MC12HXUMA1 require an external bootstrap capacitor?

No, the magnetic coupling technology used in this driver eliminates the need for an external bootstrap capacitor, simplifying the circuit design and improving long-term reliability.

What is the maximum operating junction temperature for this component?

The maximum operating junction temperature for the 1ED3251MC12HXUMA1 is specified at 150°C, allowing for robust performance in demanding thermal conditions.

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