1ED3321MC12NXUMA1

1ED3321MC12NXUMA1

$2.80
  • Description:DGT ISO 5.7KV 1CH GT DVR DSO16
  • Series:EiceDRIVER™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:cd025b074982 Category: Brand:

  
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Product Detailed Parameters

  • Description:DGT ISO 5.7KV 1CH GT DVR DSO16
  • Series:EiceDRIVER™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:Magnetic Coupling
  • Number of Channels:1
  • Voltage - Isolation:5700Vrms
  • Propagation Delay tpLH / tpHL (Max):84ns, 92ns
  • Pulse Width Distortion (Max):-
  • Rise / Fall Time (Typ):15ns, 15ns
  • Current - Output High, Low:6A, 8.5A
  • Current - Peak Output:9A, 9A
  • Voltage - Forward (Vf) (Typ):-
  • Voltage - Output Supply:40V
  • Grade:-
  • Qualification:-
  • Operating Temperature:-40°C ~ 125°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:PG-DSO-16-40
  • Common Mode Transient Immunity (Min):300kV/µs
  • Approval Agency:UL
  • Current - DC Forward (If) (Max):-

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1ED3321MC12NXUMA1

Overview

The 1ED3321MC12NXUMA1 is a high-speed, high-voltage gate driver IC designed for driving silicon carbide (SiC) MOSFETs and IGBTs. It features a dual-channel output with independent control inputs, providing robust isolation between the low-side control circuitry and the high-side power stage. The device supports a wide supply voltage range and offers precise timing characteristics to minimize switching losses in high-frequency applications.

Feature Summary

  • Integrated dual-channel architecture for independent control of high-side and low-side switches
  • High common-mode transient immunity to prevent false triggering in noisy environments
  • Dedicated desaturation detection input for short-circuit protection capabilities

Applications

  • Silicon Carbide (SiC) MOSFET gate driving in traction inverters
  • Industrial motor drives requiring high switching frequencies
  • Uninterruptible Power Supplies (UPS) systems

Procurement Notes

Verify the specific ordering suffix matches the required package type and tape/reel configuration. Confirm that the operating temperature range aligns with your system's thermal design requirements. Ensure compatibility with the control logic voltage levels used in your microcontroller or DSP interface before procurement.

Selection Notes

Select this component when driving SiC devices due to its optimized propagation delay and high peak current capability. Consider the isolation voltage rating relative to your system's creepage and clearance requirements. Evaluate the desaturation threshold settings if implementing active short-circuit protection within the application design.

Part Context

This part belongs to Infineon’s 1ED series of isolated gate drivers, specifically tailored for wide-bandgap semiconductor devices. It complements other variants in the family by offering dual-channel functionality with enhanced noise immunity, addressing the stringent demands of modern power electronics architectures.

Replacement Considerations

Direct substitutes include other 1ED3321 variants with different packaging options such as 1ED3321C12NXUMA1. Verify pinout compatibility and electrical specifications before swapping to ensure seamless integration without redesigning the PCB layout.

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