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The Infineon Technologies 1EDC60H12AHXUMA1 is a high-side gate driver from the 1ED Compact family, designed for IGBT and MOSFET applications. It features a single channel with inverting and non-inverting outputs. The device operates within a supply voltage range of 3.1 V to 17 V and delivers an output current of 6 A. Key timing parameters include a rise time of 10 ns and a fall time of 9 ns. Propagation delay reaches a maximum of 330 ns. It functions reliably between -40 °C and +125 °C.
Verify the component status as Not Recommended for New Designs (NRND) before initiating procurement. Confirm that the DSO-8-59 package and Reel/Cut Tape packaging options align with existing manufacturing processes. Ensure compliance with RoHS standards and moisture sensitivity classifications during storage and handling procedures.
Select this component for applications requiring a compact high-side driver with moderate peak current capabilities. The 10 ns rise and 9 ns fall times support efficient switching operations. Consider the 330 ns propagation delay limit when designing timing-critical circuits. The wide operating temperature range ensures suitability for demanding industrial environments.
This part belongs to the 1ED Compact series, which focuses on space-saving solutions for power electronics. It complements other drivers like the 1EDI60H12AH by offering specific output current characteristics. The series targets cost-effective designs while maintaining essential isolation and drive performance for discrete power modules.
The maximum propagation delay is 330 ns.
Yes, the device configuration includes both inverting and non-inverting output options.