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The 1EDC60I12AHXUMA1 is a high-side gate driver from the 1ED Compact family, designed for driving IGBTs and MOSFETs. It features galvanic isolation with UL certification and supports supply voltages from 3.1 V to 17 V. The device delivers peak output currents of 10 A source and 9.4 A sink, enabling fast switching with rise and fall times of 10 ns and 9 ns respectively. Propagation delays are limited to 300 ns. Operating temperatures range from -40 °C to +125 °C in a DSO-8-59 package.
Verify component authenticity through authorized channels due to the NRND status. Confirm that the DSO-8-59 package dimensions align with PCB layout requirements. Ensure proper handling procedures are followed as the device exhibits moisture sensitivity. Validate that the specific ordering suffix matches the required reel or cut tape packaging configuration for production integration.
Select this component when a single-channel high-side driver with certified isolation is required. The 1ED Compact series offers a balance of performance and size suitable for space-constrained designs. Consider the 10 A/9.4 A drive capability for medium-power applications. Verify compatibility with control logic levels and ensure adequate thermal management within the specified operating temperature range.
This part belongs to Infineon's EiceDRIVER 1ED Compact family, optimized for industrial and renewable energy applications. It provides functional galvanic isolation between input and output circuits. The 1EDC60I12AH variant specifically targets high-voltage power semiconductor switching, offering reliable performance in demanding electrical environments while maintaining compact footprint requirements.
The 1EDC60I12AH is the non-reel version of this component. Check datasheets for pinout and parameter equivalence before substitution. No direct cross-model replacements are confirmed in public documentation.