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Product Detailed Parameters
- Description：DIGITAL ISO 1CH GATE DVR DSO8-59
- Series：EiceDRIVER™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：Magnetic Coupling
- Number of Channels：1
- Voltage - Isolation：-
- Propagation Delay tpLH / tpHL (Max)：-
- Pulse Width Distortion (Max)：-
- Rise / Fall Time (Typ)：10ns, 9ns
- Current - Output High, Low：-
- Current - Peak Output：-
- Voltage - Forward (Vf) (Typ)：-
- Voltage - Output Supply：13V ~ 35V
- Grade：-
- Qualification：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.295", 7.50mm Width)
- Supplier Device Package：PG-DSO-8-59
- Common Mode Transient Immunity (Min)：-
- Approval Agency：-
- Current - DC Forward (If) (Max)：-
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Overview
The Infineon Technologies 1EDI20H12AHXUMA1 is a high-side IGBT and MOSFET gate driver from the EiceDRIVER™ 1ED Compact series. It features galvanic isolation with functional safety ratings and operates within an input supply range of 3.1 V to 17 V. The device provides separate source and sink output currents of 4 A and 3.5 A, respectively. Key electrical parameters include propagation delays of 120 ns (turn-on) and 125 ns (turn-off), with rise and fall times of 10 ns and 9 ns. It supports junction temperatures up to +150 °C and utilizes a DSO-8 surface-mount package.
Feature Summary
- Integrates short-circuit clamping functionality for robust protection against load faults.
- Provides galvanic isolation between control and power stages for functional safety compliance.
- Features independent source and sink outputs to optimize switching performance.
Applications
- Servo drives
- Industrial motor control
- General industrial drives
Procurement Notes
Verify the current lifecycle status before procurement, as this component may be marked as Not Recommended for New Designs (NRND). Confirm that the specific ordering suffix matches the required tape-and-reel packaging configuration. Ensure compatibility with existing board layouts due to the DSO-8 footprint constraints.
Selection Notes
Select this component when designing systems requiring isolated high-side driving for IGBTs or SiC MOSFETs in industrial environments. Consider its thermal resistance and maximum operating temperature limits relative to the expected ambient conditions. Evaluate the need for separate output drivers versus integrated solutions based on system complexity and efficiency targets.
Part Context
This part belongs to the EiceDRIVER™ 1ED Compact family, designed for compact and efficient power conversion applications. It complements other Infineon power semiconductors, such as CoolSiC™ MOSFETs, by providing optimized drive signals. The series emphasizes miniaturization while maintaining high reliability and isolation standards for demanding industrial sectors.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify if newer revisions within the same product family offer updated availability or enhanced specifications suitable for replacement.
