SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Infineon Technologies 1EDI40I12AHXUMA1 is a high-side isolated gate driver from the 1ED Compact series, designed for IGBT and MOSFET applications. It features galvanic isolation with a voltage rating of 1200 V. The device provides an output current capability of 7.5 A source and 6.8 A sink. It operates within a supply voltage range of 3.1 V to 17 V. Key timing parameters include a rise time of 10 ns, fall time of 9 ns, and propagation delay of 300 ns. The component is housed in a DSO-8 package and supports industrial temperature ranges from -40°C to +150°C.
Verify the Not Recommended for New Design (NRND) status before implementation. Confirm that the DSO-8 SMD package and reel/cut tape packaging options align with manufacturing capabilities. Ensure compliance with moisture sensitivity levels and thermal dissipation requirements during integration.
Select this component for applications requiring high-side isolation with moderate output current. Consider the 1200 V isolation rating and compact DSO-8 footprint. Evaluate the 300 ns propagation delay against system switching speed requirements. Verify compatibility with CMOS logic inputs and required supply voltage ranges.
This part belongs to the 1ED Compact family of isolated gate drivers by Infineon Technologies. It is specifically engineered for high-voltage power electronics, offering functional isolation and robust performance for industrial and automotive-grade applications involving IGBTs and MOSFETs.
Public confirmed substitute part numbers are not available in the provided documentation.