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The Infineon Technologies 1EDI60H12AHXUMA1 is a single-channel high-side IGBT and MOSFET gate driver from the EiceDRIVER™ 1ED Compact family. It features galvanic isolation with a voltage rating of 1200 V. The device provides an output current capability of 9.4 A sink and 10 A source, with propagation delays of 120 ns (turn-on) and 125 ns (turn-off). Operating within a supply voltage range of 3.1 V to 17 V, it utilizes a DSO-8 surface-mount package. Key electrical parameters include typical on-resistances of 0.75 Ω for both high-side and low-side outputs.
Verify component authenticity through authorized channels due to the NRND status. Confirm that the specific suffix XUMA1 matches the required reel packaging specifications. Ensure design compliance with moisture sensitivity levels and thermal dissipation requirements before finalizing procurement orders.
Select this component for designs requiring compact integration of high-side driving capabilities. Consider the 1200 V isolation rating when interfacing with corresponding power modules. Evaluate the 1ED Compact form factor against available PCB space constraints and verify compatibility with standard CMOS logic inputs.
This part belongs to the EiceDRIVER™ 1ED Compact series, designed for efficient gate driving in industrial environments. It represents a specialized solution for managing high-voltage transitions while maintaining signal integrity across isolated boundaries.
Consult official documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter alignment before implementing any alternative components in existing designs.