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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Infineon Technologies 1EDI60I12AHXUMA1 is a high-side IGBT and MOSFET gate driver from the EiceDRIVER 1ED Compact family. It features galvanic isolation with a voltage rating of 1200 V and operates in a DSO-8 surface-mount package. The device provides a single channel with independent source and sink output currents of 10 A and 9.4 A, respectively. It supports both inverting and non-inverting logic configurations with propagation delays up to 300 ns. Operating temperatures range from -40 °C to +150 °C, and it includes shutdown functionality.
Verify component authenticity through authorized channels as this part is marked Not Recommended for New Designs (NRND). Confirm specific ordering suffixes match exact packaging requirements. Check current lifecycle status before finalizing procurement plans due to potential obsolescence constraints.
Select this component for high-side switching applications requiring robust isolation and fast response times. Ensure supply voltage ranges align with system requirements. Consider thermal management capabilities given the operating temperature limits and power dissipation specifications inherent to the DSO-8 package.
This device belongs to the EiceDRIVER 1ED Compact series, designed for cost-effective and space-saving solutions. It integrates advanced protection features within a compact footprint, targeting industrial and renewable energy markets where reliability and efficiency are critical for power conversion stages.
Public confirmed substitute part numbers: 1EDI60I12AFXUMA1.