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The Infineon Technologies 1EDI60N12AFXUMA1 is a high-side MOSFET gate driver from the EiceDRIVER 1ED Compact family. It features galvanic isolation with a voltage rating of 1200V and operates within an input supply range of 3.1V to 17V. The device provides a peak output current of 9.4A and supports both inverting and non-inverting configurations. Key timing parameters include a rise time of 10ns, a fall time of 9ns, and a maximum propagation delay of 150ns. It functions reliably across a temperature range of -40°C to +150°C and is housed in a DSO-8 surface-mount package.
Verify the complete part number including the XUMA1 suffix to ensure correct tape-and-reel packaging specifications. Confirm that the component meets RoHS compliance requirements for your specific manufacturing process. Check for moisture sensitivity classification details prior to soldering to prevent damage during assembly. Ensure the ordering quantity aligns with standard reel sizes if bulk procurement is intended.
Select this component when a single-channel high-side driver with 1200V isolation is required. It is suitable for driving silicon or wide-bandgap devices where compact size is critical. Consider the DSO-8 package constraints for thermal management and PCB layout. Verify that the 9.4A drive strength matches the gate charge requirements of the target power switch.
This device belongs to the EiceDRIVER 1ED Compact series, designed for space-constrained power electronics. It integrates functional safety features typical of modern isolated drivers. The product line targets efficient power conversion systems requiring reliable high-side switching capabilities in industrial and consumer applications.
Check for direct substitutes within the 1EDI60N12AF series. Verify pin compatibility and electrical specifications before substituting with other high-side drivers. Ensure any alternative maintains the same isolation voltage and package dimensions.