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The Infineon Technologies 1EDN6550BXTSA1 is a single-channel, non-isolated gate driver designed for SiC MOSFETs, IGBTs, and GaN HEMTs. It features separate sink and source outputs with peak currents of 4 A and 8 A respectively. The device operates within a supply voltage range of 4.5 V to 20 V and supports both inverting and non-inverting logic inputs. Key electrical parameters include a maximum propagation delay of 55 ns, a rise time of 6.5 ns, and an operating temperature range from -40°C to +150°C. It is housed in a compact SOT-23-6 package.
Verify the complete ordering code, specifically the XTSA1 suffix, to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Cross-reference the datasheet revision date to ensure alignment with current design requirements and regulatory standards.
Select this component when driving SiC or GaN devices requiring asymmetric drive strengths. The 4A/8A output configuration allows for optimized switching speed control. Ensure the application circuit accommodates the SOT-23-6 thermal constraints given the high peak current capabilities and extended temperature rating up to 150°C.
This part belongs to the EiceDRIVER family of non-isolated gate drivers from Infineon Technologies. It is engineered for industrial applications demanding high reliability and fast switching speeds. The series supports various power semiconductor technologies, providing a standardized interface for modern power electronics designs.
Check for pin-compatible alternatives within the same EiceDRIVER family that may offer different current ratings or input configurations. Verify that any substitute maintains compatibility with SiC/GaN gate voltage requirements and signal timing characteristics.