1EDN6550BXTSA1

1EDN6550BXTSA1

$0.60
  • Description:IC GATE DRVR HI/LOW SIDE SOT23-6
  • Series:EiceDRIVER™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:6344402285c1 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR HI/LOW SIDE SOT23-6
  • Series:EiceDRIVER™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Driven Configuration:High-Side and Low-Side
  • Channel Type:Single
  • Number of Drivers:2
  • Gate Type:MOSFET (N-Channel), SiC MOSFET
  • Voltage - Supply:4.5V ~ 20V
  • Logic Voltage - VIL, VIH:-
  • Current - Peak Output (Source, Sink):5.2A, 9.4A
  • Input Type:Inverting, Non-Inverting
  • Rise / Fall Time (Typ):1ns, 1ns
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6
  • Supplier Device Package:PG-SOT23-6-3
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):400 V

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1EDN6550BXTSA1

Overview

The Infineon Technologies 1EDN6550BXTSA1 is a single-channel, non-isolated gate driver designed for SiC MOSFETs, IGBTs, and GaN HEMTs. It features separate sink and source outputs with peak currents of 4 A and 8 A respectively. The device operates within a supply voltage range of 4.5 V to 20 V and supports both inverting and non-inverting logic inputs. Key electrical parameters include a maximum propagation delay of 55 ns, a rise time of 6.5 ns, and an operating temperature range from -40°C to +150°C. It is housed in a compact SOT-23-6 package.

Feature Summary

  • Supports wide-bandgap semiconductors including Silicon Carbide (SiC) MOSFETs, IGBTs, and Gallium Nitride (GaN) HEMTs
  • Provides differential input capability for robust noise immunity in high-speed switching applications
  • Features separate sink and source output stages to optimize turn-on and turn-off performance

Applications

  • Industrial motor drives
  • Power supplies and converters
  • Solar inverters

Procurement Notes

Verify the complete ordering code, specifically the XTSA1 suffix, to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Cross-reference the datasheet revision date to ensure alignment with current design requirements and regulatory standards.

Selection Notes

Select this component when driving SiC or GaN devices requiring asymmetric drive strengths. The 4A/8A output configuration allows for optimized switching speed control. Ensure the application circuit accommodates the SOT-23-6 thermal constraints given the high peak current capabilities and extended temperature rating up to 150°C.

Part Context

This part belongs to the EiceDRIVER family of non-isolated gate drivers from Infineon Technologies. It is engineered for industrial applications demanding high reliability and fast switching speeds. The series supports various power semiconductor technologies, providing a standardized interface for modern power electronics designs.

Replacement Considerations

Check for pin-compatible alternatives within the same EiceDRIVER family that may offer different current ratings or input configurations. Verify that any substitute maintains compatibility with SiC/GaN gate voltage requirements and signal timing characteristics.

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