1EDN7116GXTMA1

Overview

The Infineon Technologies 1EDN7116GXTMA1 is a high-side gate driver from the EiceDRIVER family, designed for driving GaN HEMTs and MOSFETs. It operates with a supply voltage range of 4.2 V to 11 V and delivers a peak output current of 2 A. The device features non-inverting logic configuration with CMOS input compatibility. Key timing parameters include rise and fall times of 3 ns, and maximum on/off delay times of 77 ns. It functions within an operating temperature range of -40°C to +125°C and is housed in a VSON-10 package.

Feature Summary

• Truly differential input architecture for enhanced noise immunity
• Optimized for high-performance system design with GaN SG HEMTs
• Compact surface-mount packaging for efficient board space utilization

Applications

• Driving Gallium Nitride (GaN) single-gate HEMTs
• High-frequency power conversion circuits
• Motor drive applications requiring fast switching

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official documentation. Ensure storage conditions align with manufacturer specifications to maintain reliability. Cross-reference datasheet revisions before implementation to guarantee parameter accuracy.

Selection Notes

Select this component when high-speed switching and robust noise rejection are required for wide-bandgap devices. The 2 A output capability supports moderate load requirements. Evaluate thermal management needs given the VSON-10 form factor and specified operating temperature limits.

Part Context

This part belongs to the EiceDRIVER series by Infineon Technologies, specialized for power electronics. It serves as a high-side driver within half-bridge configurations. The technology targets modern efficiency demands in power management ICs and gate driver applications.

Replacement Considerations

The 1EDN7136GXTMA1 is a documented substitute within the same family, offering similar functionality with adjusted electrical characteristics.