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Product Detailed Parameters
- Description：IC GATE DRVR HI/LOW SIDE TSNP-7
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration：High-Side or Low-Side
- Channel Type：-
- Number of Drivers：-
- Gate Type：-
- Voltage - Supply：-
- Logic Voltage - VIL, VIH：-
- Current - Peak Output (Source, Sink)：-
- Input Type：-
- Rise / Fall Time (Typ)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：-
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Overview
The Infineon Technologies 1EDN7116UXTSA1 is a single-channel high-side gate driver IC designed for driving GaN SG HEMTs and Si MOSFETs. It features a 200 V True Differential Input (TDI) topology with an active Miller clamp to prevent false triggering. The device provides a peak output current of 2 A source/sink, operates within a supply voltage range of 4.2 V to 11 V, and supports logic input voltages from 4.2 V to 11 V. Propagation delays are typically 55 ns, with rise and fall times of 3 ns. It functions in temperatures from -40 °C to +125 °C and is housed in a TSNP-7 package.
Feature Summary
- Optimized specifically for driving GaN SG HEMTs and Si MOSFETs
- Features fully differential logic input circuitry to avoid false triggering
- Includes an active Miller clamp function for enhanced reliability
Applications
- Low-voltage inverters for motor drives
- Solar optimizer applications
- High-frequency switching power supplies
Procurement Notes
Verify the specific ordering suffix 'XTSA1' against official Infineon documentation to confirm tape-and-reel packaging and quantity specifications. Ensure that the component's industrial quality grade and RoHS compliance status align with your project requirements before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring a 200 V high-side driver with true differential inputs for GaN transistors. It is suitable for applications demanding fast switching speeds and robust noise immunity against Miller coupling effects in half-bridge configurations.
Part Context
This part belongs to the EiceDRIVER™ 1EDN71X6U series, which focuses on high-performance gate driving solutions for wide-bandgap semiconductors. The series utilizes coreless transformer technology principles to provide isolated-like performance without traditional optocouplers, enabling compact system designs.
Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Generic replacements may not support the specific 200 V TDI requirements or GaN optimization necessary for equivalent performance.
