1EDN7126GXTMA1

Overview

The Infineon Technologies 1EDN7126GXTMA1 is a single-channel high-side gate driver IC designed for GaN HEMTs and Si MOSFETs. It features a non-inverting configuration with a peak output current of 1.5 A. The device operates within a supply voltage range of 4.2 V to 11 V, delivering an output voltage up to 11 V. Key timing parameters include rise and fall times of 4 ns, with maximum on/off delays of 57 ns. It supports CMOS logic inputs and functions across an operating temperature range of -40°C to +125°C. Packaged in a VSON-10 format.

Feature Summary

• Integrated Time Delay Injection (TDI) functionality for optimized switching performance
• High common-mode rejection capability suitable for high dv/dt environments
• Optimized specifically for driving Gallium Nitride High Electron Mobility Transistors

Applications

• Driving GaN Single Gate HEMTs in power conversion circuits
• Switching applications involving Silicon MOSFETs requiring precise timing control
• High-frequency power supply topologies utilizing time delay injection

Procurement Notes

Verify the specific ordering suffix XTMA1 against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets RoHS compliance requirements as stated in the product documentation. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.

Selection Notes

Select this component when a dedicated high-side driver with built-in time delay injection is required for GaN devices. Ensure the application voltage does not exceed the 11 V supply limit. Consider the VSON-10 package size for space-constrained designs. Verify that the input signal compatibility aligns with the specified CMOS logic levels and that the thermal environment remains within the -40°C to +125°C operational range.

Part Context

This device belongs to the EiceDRIVER family from Infineon Technologies, which specializes in intelligent gate driver solutions. The 1EDN series focuses on providing robust protection and precise timing control for wide-bandgap semiconductors. This specific model addresses the need for simplified design in high-efficiency power stages by integrating critical timing adjustments directly into the driver IC.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.