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Product Detailed Parameters
- Description：IC GATE DRVR HI/LOW SIDE TSNP-7
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration：High-Side or Low-Side
- Channel Type：-
- Number of Drivers：-
- Gate Type：-
- Voltage - Supply：-
- Logic Voltage - VIL, VIH：-
- Current - Peak Output (Source, Sink)：-
- Input Type：-
- Rise / Fall Time (Typ)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：-
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Overview
The Infineon Technologies 1EDN7126UXTSA1 is a single-channel high-side gate driver IC designed for GaN SG HEMTs and MOSFETs. It features a 200 V common-mode rejection rating and operates within an input voltage range of 4.2 V to 11 V. The device provides 1.5 A source and sink output currents with propagation delays of up to 77 ns. It utilizes a non-isolated, non-inverting configuration in a TSNP-7 package, supporting industrial temperature ranges from -40 °C to +125 °C.
Feature Summary
- Supports truly differential input (TDI) architecture for robust signal integrity
- Optimized for driving Gallium Nitride (GaN) Single-Gate High Electron Mobility Transistors (HEMTs)
- Provides high common-mode rejection capability suitable for high dv/dt environments
Applications
- High-frequency power conversion systems using GaN transistors
- Industrial motor drives requiring high-side switching
- DC-DC converters utilizing silicon or gallium nitride MOSFETs
Procurement Notes
Verify the specific suffix XTSA1 against the manufacturer's current datasheet to confirm packaging and tape-and-reel specifications. Ensure the ordering part number matches the required RoHS compliance status and industrial qualification standards. Cross-reference the PG-TSNP-7 package dimensions with your PCB footprint library before finalizing procurement orders.
Selection Notes
Select this component when a single-channel high-side driver with true differential input is required for GaN devices. The 200 V CMR rating distinguishes it from lower-voltage alternatives. Consider the TSNP-7 package constraints and the 4.2 V to 11 V supply range compatibility with your control logic levels during the design phase.
Part Context
This part belongs to the EiceDRIVER 1EDN71X6U series, which focuses on high-performance gate driving for wide-bandgap semiconductors. The series emphasizes compact integration and noise immunity through coreless transformer technology principles, adapted here for non-isolated high-side applications in industrial power electronics.
Replacement Considerations
Check the official Infineon replacement guide for direct pin-compatible upgrades within the 1EDN71XXU family. Verify that any substitute maintains the 200 V CMR and TDI input requirements for GaN compatibility.
