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The Infineon Technologies 1EDN7136GXTMA1 is a single-channel high-side gate driver from the EiceDRIVER family, designed for GaN HEMTs and Si MOSFETs. It operates within a supply voltage range of 4.2 V to 11 V and delivers a peak output current of 1 A. The device features non-inverting logic with rise and fall times of 5.5 ns. Maximum delay times are 109 ns. It functions in temperatures from -40 °C to +125 °C and utilizes a VSON-10 package.
Verify the complete part number including the suffix GXTMA1 to ensure correct packaging and tape-and-reel configuration. Confirm that the application requires a single high-side driver with 1 A output capability. Check datasheet specifications for supply voltage limits and thermal performance requirements before finalizing procurement orders.
Select this component when a dedicated high-side driver for GaN or Si MOSFETs is required. The 1 A output current suits moderate power applications. Consider the VSON-10 package size for PCB layout constraints. Ensure the control signal matches the non-inverting logic requirement. Evaluate thermal management needs given the operating temperature range up to 125 °C.
This part belongs to the 1EDN series of EiceDRIVER gate drivers by Infineon Technologies. These components are engineered specifically for modern power electronics utilizing wide-bandgap semiconductors. The series offers various current ratings and configurations to support diverse high-frequency switching applications in industrial and automotive sectors.
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs if considering alternative manufacturers. Consult official Infineon resources for potential cross-reference options based on specific electrical parameter requirements.