1EDN7136GXTMA1

1EDN7136GXTMA1

$0.60
  • Description:IC GATE DRVR HI/LOW SIDE 10VFDFN
  • Series:EiceDRIVER™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:2505f2206920 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR HI/LOW SIDE 10VFDFN
  • Series:EiceDRIVER™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Driven Configuration:High-Side or Low-Side
  • Channel Type:Independent
  • Number of Drivers:1
  • Gate Type:MOSFET (N-Channel)
  • Voltage - Supply:4.2V ~ 11V
  • Logic Voltage - VIL, VIH:-
  • Current - Peak Output (Source, Sink):1A, 1A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):5.5ns, 5.5ns
  • Operating Temperature:-40°C ~ 125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:10-VFDFN Exposed Pad
  • Supplier Device Package:PG-VSON-10-4
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):-

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1EDN7136GXTMA1

Overview

The Infineon Technologies 1EDN7136GXTMA1 is a single-channel high-side gate driver from the EiceDRIVER family, designed for GaN HEMTs and Si MOSFETs. It operates within a supply voltage range of 4.2 V to 11 V and delivers a peak output current of 1 A. The device features non-inverting logic with rise and fall times of 5.5 ns. Maximum delay times are 109 ns. It functions in temperatures from -40 °C to +125 °C and utilizes a VSON-10 package.

Feature Summary

  • Integrates active Miller clamp functionality to prevent false triggering during switching transitions.
  • Optimized for driving wide-bandgap devices such as Gallium Nitride High Electron Mobility Transistors.
  • Provides robust protection mechanisms inherent to the EiceDRIVER architecture for reliable operation.

Applications

  • Gate driving for Gallium Nitride High Electron Mobility Transistors (GaN HEMTs)
  • High-side switching control for Silicon Metal-Oxide-Semiconductor Field-Effect Transistors (Si MOSFETs)
  • Power conversion stages requiring isolated or floating high-side drive signals

Procurement Notes

Verify the complete part number including the suffix GXTMA1 to ensure correct packaging and tape-and-reel configuration. Confirm that the application requires a single high-side driver with 1 A output capability. Check datasheet specifications for supply voltage limits and thermal performance requirements before finalizing procurement orders.

Selection Notes

Select this component when a dedicated high-side driver for GaN or Si MOSFETs is required. The 1 A output current suits moderate power applications. Consider the VSON-10 package size for PCB layout constraints. Ensure the control signal matches the non-inverting logic requirement. Evaluate thermal management needs given the operating temperature range up to 125 °C.

Part Context

This part belongs to the 1EDN series of EiceDRIVER gate drivers by Infineon Technologies. These components are engineered specifically for modern power electronics utilizing wide-bandgap semiconductors. The series offers various current ratings and configurations to support diverse high-frequency switching applications in industrial and automotive sectors.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs if considering alternative manufacturers. Consult official Infineon resources for potential cross-reference options based on specific electrical parameter requirements.

1EDN7136GXTMA11EDN7136GXTMA1
$0.60
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