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The Infineon Technologies 1EDN7136UXTSA1 is a high-side gate driver IC designed for driving GaN HEMTs and Si MOSFETs. It features a truly differential input with 200 V common-mode rejection, ensuring robust signal integrity in high-noise environments. The device provides a single output capable of sourcing and sinking 1 A peak current. It operates within a supply voltage range of 4.2 V to 11 V and supports CMOS logic inputs. Key timing parameters include rise and fall times of 5.5 ns, with maximum propagation delays of 109 ns. It functions reliably across an extended temperature range from -40 °C to +125 °C.
Verify the specific suffix XTSA1 against the manufacturer's official datasheet to confirm package type and tape-and-reel specifications. Ensure compatibility with system voltage levels and thermal requirements before finalizing procurement. Cross-reference ordering numbers with authorized distributors to avoid counterfeit components.
Select this component when high common-mode transient immunity is required for high-side switching applications. The 1 A output current is suitable for medium-power GaN devices. Consider the TSNP-7 package constraints for PCB layout and thermal management during the design phase.
This part belongs to the 1EDN71xx series of gate drivers from Infineon Technologies. These drivers are specifically engineered for wide-bandgap semiconductors, offering enhanced performance over standard isolated drivers in terms of speed and noise resilience.
Check for pin-compatible alternatives within the same Infineon family, such as variants with different current ratings or delay characteristics, while verifying functional equivalence for GaN applications.