1EDN7136UXTSA1

1EDN7136UXTSA1

$0.64
  • Description:IC GATE DRVR HI/LOW SIDE TSNP-7
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:537dfa3a6eac Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR HI/LOW SIDE TSNP-7
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Driven Configuration:High-Side or Low-Side
  • Channel Type:-
  • Number of Drivers:-
  • Gate Type:-
  • Voltage - Supply:-
  • Logic Voltage - VIL, VIH:-
  • Current - Peak Output (Source, Sink):-
  • Input Type:-
  • Rise / Fall Time (Typ):-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):-

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1EDN7136UXTSA1

Overview

The Infineon Technologies 1EDN7136UXTSA1 is a high-side gate driver IC designed for driving GaN HEMTs and Si MOSFETs. It features a truly differential input with 200 V common-mode rejection, ensuring robust signal integrity in high-noise environments. The device provides a single output capable of sourcing and sinking 1 A peak current. It operates within a supply voltage range of 4.2 V to 11 V and supports CMOS logic inputs. Key timing parameters include rise and fall times of 5.5 ns, with maximum propagation delays of 109 ns. It functions reliably across an extended temperature range from -40 °C to +125 °C.

Feature Summary

  • Truly differential input architecture providing high noise immunity
  • Integrated active Miller clamp to prevent false turn-on
  • Optimized for direct drive of GaN SG HEMTs and Si MOSFETs

Applications

  • Gallium Nitride (GaN) power stage driving
  • Silicon MOSFET gate control
  • High-frequency power conversion systems

Procurement Notes

Verify the specific suffix XTSA1 against the manufacturer's official datasheet to confirm package type and tape-and-reel specifications. Ensure compatibility with system voltage levels and thermal requirements before finalizing procurement. Cross-reference ordering numbers with authorized distributors to avoid counterfeit components.

Selection Notes

Select this component when high common-mode transient immunity is required for high-side switching applications. The 1 A output current is suitable for medium-power GaN devices. Consider the TSNP-7 package constraints for PCB layout and thermal management during the design phase.

Part Context

This part belongs to the 1EDN71xx series of gate drivers from Infineon Technologies. These drivers are specifically engineered for wide-bandgap semiconductors, offering enhanced performance over standard isolated drivers in terms of speed and noise resilience.

Replacement Considerations

Check for pin-compatible alternatives within the same Infineon family, such as variants with different current ratings or delay characteristics, while verifying functional equivalence for GaN applications.

1EDN7136UXTSA11EDN7136UXTSA1
$0.64
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