SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The 1EDN7146GXTMA1 is a high-side gate driver from Infineon's EiceDRIVER family, designed for GaN technology. It operates within a supply voltage range of 4.2 V to 11 V and delivers a peak output current of 500 mA. The device features non-inverting logic with CMOS input compatibility. Key timing parameters include rise and fall times of 11 ns, and maximum on/off delay times of 129 ns. It functions reliably across an extended temperature range from -40°C to +125°C. Packaged in a compact VSON-10 surface-mount format, it supports reel-based manufacturing integration.
Verify the Not Recommended for New Design (NRND) status before initiating new projects. Confirm RoHS compliance details through official documentation. Ensure the VSON-10 package footprint matches PCB layout requirements. Validate that the 500 mA output capability meets specific load demands. Check current availability as stock levels may be limited.
Select this component when designing circuits requiring dedicated high-side control for GaN transistors. Consider the 11 ns switching speed for efficiency requirements. Evaluate the 4.2 V minimum supply voltage against system power rails. Compare against higher current alternatives like the 1EDN7116 if stronger drive strength is necessary. Assess thermal performance within the specified operating temperature range.
This part belongs to the EiceDRIVER series, specialized for wide-bandgap semiconductor drivers. It complements other variants in the lineup by offering balanced performance for medium-current GaN applications. The VSON-10 packaging aligns with modern miniaturization trends in power electronics.
The 1EDN7116GXTMA1 serves as a verified alternative within the same family, providing enhanced 2 A output current capability while maintaining similar packaging and operational characteristics.