1EDN8511BXUSA1

1EDN8511BXUSA1

$0.52
  • Description:IC GATE DRVR LOW-SIDE SOT23-6
  • Series:EiceDRIVER™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:06a6613b6116 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IC GATE DRVR LOW-SIDE SOT23-6
  • Series:EiceDRIVER™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Driven Configuration:Low-Side
  • Channel Type:Single
  • Number of Drivers:1
  • Gate Type:MOSFET (N-Channel, P-Channel)
  • Voltage - Supply:8V ~ 20V
  • Logic Voltage - VIL, VIH:1.2V, 1.9V
  • Current - Peak Output (Source, Sink):4A, 8A
  • Input Type:Inverting, Non-Inverting
  • Rise / Fall Time (Typ):6.5ns, 4.5ns
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6
  • Supplier Device Package:PG-SOT23-6-2
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):-

Download product information

1EDN8511BXUSA1

Overview

The Infineon 1EDN8511BXUSA1 is a single-channel low-side gate driver IC designed for IGBT and MOSFET switching applications. It features an output current capability of 4 A source and 8 A sink, with propagation delays of 25 ns maximum. The device operates within a supply voltage range of 4.5 V to 20 V and supports CMOS/TTL logic inputs. It offers inverting and non-inverting configurations with rise and fall times of 6.5 ns and 4.5 ns respectively. The component is housed in a SOT-23-6-2 package and functions across a temperature range of -40°C to +150°C.

Feature Summary

  • Single-channel low-side configuration for driving power switches
  • High peak output currents of 4 A source and 8 A sink
  • Fast switching performance with sub-7 ns transition times
  • Wide operating supply voltage range from 4.5 V to 20 V

Applications

  • Industrial motor control systems
  • Switched-mode power supplies (SMPS)
  • Inverter circuits for electric drives
  • General purpose IGBT and MOSFET gate driving

Procurement Notes

Verify the specific suffix USA1 against the official Infineon datasheet to confirm package type and tape-and-reel specifications. Ensure compatibility with system voltage requirements and thermal management needs. Cross-reference the ordering number with the manufacturer's current product status to confirm availability and lead time constraints before finalizing procurement plans.

Selection Notes

Select this component for applications requiring high-speed switching with moderate drive current in a compact surface-mount footprint. The low-side topology suits half-bridge or single-switch configurations where the load connects to the positive rail. Consider the 20 V maximum supply limit when designing bootstrap or isolated power stages for high-voltage primary sides.

Part Context

This part belongs to the Infineon 1EDN series of rugged, cool, and fast gate drivers. It is specifically engineered for industrial environments, offering robust performance for driving IGBTs and MOSFETs. The series emphasizes reliability and speed, making it suitable for demanding power conversion tasks where efficiency and thermal stability are critical design parameters.

Replacement Considerations

Direct substitutes within the same family include the 1EDN8511B variant. Verify pinout compatibility and electrical parameter equivalence, particularly regarding output current capabilities and supply voltage ranges, before implementing any cross-replacement in existing designs.

1EDN8511BXUSA11EDN8511BXUSA1
$0.52
Buy Now