1EDN8550BXTSA1

1EDN8550BXTSA1

$0.60
  • Description:IC GATE DRVR HIGH-SIDE SOT23-6
  • Series:EiceDRIVER™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:549db6df7922 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR HIGH-SIDE SOT23-6
  • Series:EiceDRIVER™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Driven Configuration:High-Side
  • Channel Type:Single
  • Number of Drivers:1
  • Gate Type:MOSFET (N-Channel, P-Channel)
  • Voltage - Supply:4.5V ~ 20V
  • Logic Voltage - VIL, VIH:-
  • Current - Peak Output (Source, Sink):4A, 8A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):6.5ns, 4.5ns
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6
  • Supplier Device Package:PG-SOT23-6
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):84 V

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1EDN8550BXTSA1

Overview

The Infineon Technologies 1EDN8550BXTSA1 is a single-channel EiceDRIVER gate-drive IC featuring true differential inputs. It operates within a supply voltage range of 4.5 V to 20 V and delivers an output current of 8 A. The device utilizes silicon technology and is housed in a PG-SOT23-6 package. Key timing parameters include a maximum propagation delay of 45 ns, rise time of 6.5 ns, and fall time of 4.5 ns. It supports operating temperatures from -40 °C to +150 °C with a quiescent supply current of 1.06 mA.

Feature Summary

  • Features true differential input architecture for enhanced noise immunity in high-voltage environments.
  • Provides robust driving capability with 8 A peak output current for efficient MOSFET control.
  • Designed for high-temperature operation up to 150 °C using reliable silicon technology.

Applications

  • Power supplies
  • Industrial motor drives
  • Inverters

Procurement Notes

Verify the specific suffix XTSA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with the target PCB footprint for the PG-SOT23-6 package. Cross-reference the revision level (e.g., Rev. 2.2) with the latest datasheet to validate pinout and electrical characteristics before finalizing procurement orders.

Selection Notes

Select this component when a single-channel driver with differential signaling is required for high-side applications. The 8 A output current suits medium-power MOSFET switching needs. Consider the 45 ns propagation delay and 6.5/4.5 ns transition times for switching frequency requirements. Verify that the 4.5–20 V supply range aligns with the system's bootstrap or isolated power design constraints.

Part Context

This part belongs to the 1EDN series of EiceDRIVER gate drivers from Infineon Technologies. These devices are engineered for isolated gate drive applications, offering compact solutions for power electronics. The 1EDN8550B specifically targets half-bridge configurations requiring precise control of N-type and P-type MOSFETs in demanding industrial and consumer power supply environments.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon cross-reference tools for verified alternatives.

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