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The 1EZ200DE3/TR12 is a single silicon Zener diode manufactured by Microsemi Corporation. It features a nominal Zener voltage of 200 V with a tolerance of ±5%. The device has a maximum power dissipation rating of 1 W and operates within a junction temperature range of -65°C to +150°C. It utilizes a DO-41 (DO-204AL) axial-leaded plastic package for through-hole mounting. The component exhibits a reverse leakage current of 500 nA at 152 V and a forward voltage drop of 1.2 V at 200 mA.
Verify the specific suffix 'e3' confirms lead-free matte tin plating compliance. Confirm the 'TR12' designation indicates reel packaging specifications. Ensure the manufacturer source is Microsemi or authorized successor entities due to corporate acquisitions. Validate that the component meets required environmental standards for the intended deployment environment.
Select this component when a 200 V Zener voltage with 5% tolerance is required in a standard axial package. Consider the 1 W power rating and thermal management needs for continuous operation. Evaluate the ±5% tolerance against circuit sensitivity requirements compared to tighter tolerance alternatives.
This part belongs to the 1EZ series of 1.0 watt Zener diodes produced by Microsemi. The series offers voltage selections from 110 to 200 volts in DO-41 plastic packages. The 'e3' suffix denotes RoHS compliance, while the base model provides standard military-grade screening levels without dry pack requirements.
Compatible substitutes include other 1W Zener diodes with 200V nominal voltage and ±5% tolerance in DO-41 packages. Verify equivalent thermal resistance and leakage current specifications before substitution.