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The 1F3 is a single fast recovery rectifier diode manufactured by SMC Diode Solutions. It features a maximum DC reverse voltage (Vr) of 200 V and an average forward rectified current (Io) of 1 A. The device utilizes the R-1 axial through-hole package. Key electrical parameters include a maximum reverse leakage current of 5 µA at 200 V, a typical forward voltage of 1.3 V at 1 A, and a reverse recovery time (trr) of 25 ns. Junction capacitance is specified as 5 pF at 4 V and 1 MHz. The component operates within a junction temperature range of -65°C to 150°C.
Verify the specific suffix or tape/reel designation when ordering, as packaging options may vary. Confirm that the R-1 axial leaded package matches the target PCB footprint requirements. Ensure the 200 V rating provides sufficient margin for the peak inverse voltage present in the intended circuit design before finalizing procurement.
Select this component when a 1 A current rating and 200 V blocking capability are required in an axial through-hole form factor. The 25 ns reverse recovery time distinguishes it from standard general-purpose diodes, making it suitable for higher frequency applications where standard recovery times would cause excessive losses. Compare against the 1F4 model if a higher voltage rating is needed.
The 1F3 belongs to the 1F series of fast recovery rectifiers produced by SMC Diode Solutions. This series includes variants with different voltage ratings, such as the 1F4 (400 V) and 1F7, all sharing similar current capabilities and package styles. These components are designed for discrete semiconductor applications requiring reliable rectification in compact axial packages.
The 1F4 is a related part within the same series offering a higher voltage rating of 400 V while maintaining the same 1 A current and R-1 package. Verify that the increased voltage rating does not impact cost or availability constraints if substituting.