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Product Detailed Parameters
- Description：MOSFET N-CH 100V 270MA 3CPH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk,Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：270mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：8Ohm @ 140mA, 10V
- Vgs(th) (Max) @ Id：2.6V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：0.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：15 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-CPH
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The onsemi 1HN04CH-TL-W is a single N-channel power MOSFET designed for surface-mount applications. It features a drain-source breakdown voltage (VDS) of 100 V and a continuous drain current (ID) of 270 mA at ambient temperature. The device exhibits a maximum on-resistance (RDS(on)) of 6 ohms at a gate-source voltage (VGS) of 5 V, with a threshold voltage (VGS(th)) of 1.2 V. It operates within a junction temperature range of -55°C to +150°C and has a power dissipation rating of 600 mW. The component utilizes silicon technology and is housed in a SOT-23-3 package.
Feature Summary
- N-channel enhancement mode construction for standard switching operations
- High voltage capability suitable for low-power protection circuits
- Surface-mount compatible packaging for automated assembly
Applications
- Battery protection circuits
- Load switching applications
- General-purpose low-power switching
Procurement Notes
Verify the specific ordering suffix and tape-and-reel quantity against the official datasheet before procurement. Confirm that the component status aligns with project lifecycle requirements, as availability may vary. Ensure that the SOT-23-3 footprint matches the design layout specifications precisely to avoid assembly issues.
Selection Notes
Select this component when a 100 V N-channel MOSFET with moderate current handling is required in a compact form factor. Evaluate the RDS(on) value against thermal constraints for the intended load current. Consider the gate charge characteristics if high-frequency switching performance is critical for the application design.
Part Context
This part belongs to the family of single N-channel power MOSFETs manufactured by onsemi. These devices are typically utilized in consumer electronics and industrial equipment where space-saving surface-mount solutions are necessary. The SOT-23-3 package provides a balance between electrical performance and physical size for low-power discrete semiconductor applications.
Replacement Considerations
Consult official cross-reference data for verified substitutes. Ensure any replacement maintains identical pinout configuration, voltage ratings, and package dimensions to guarantee mechanical and electrical compatibility without redesigning the PCB layout.
