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The 1M200Z R1G is a glass passivated junction silicon Zener diode manufactured by Taiwan Semiconductor Corporation. It features a nominal Zener voltage of 200V with a tolerance of ±5% and a maximum power dissipation of 1W at 50°C ambient temperature. The device operates within a junction temperature range of -55°C to +150°C and exhibits a typical reverse leakage current of less than 5µA above 11V. Packaged in the DO-204AL (DO-41) axial through-hole format, it includes built-in strain relief and pure tin-plated leads solderable per J-STD-002 standards.
Verify the specific datasheet version for the 1M200Z R1G to confirm exact electrical tolerances and thermal characteristics. Ensure the ordering suffix matches required compliance standards, such as halogen-free compound or AEC-Q101 qualification if applicable. Cross-reference mechanical dimensions against the target PCB layout requirements before finalizing procurement decisions.
Select this component for applications requiring a 200V regulation point with 1W power handling capability in a standard axial package. Consider the ±5% voltage tolerance and 35 Ohms impedance limits when designing precision reference circuits. Evaluate the operating temperature range to ensure suitability for environments exceeding standard commercial temperatures.
This part belongs to the 1N47xx series of high-power Zener diodes from Taiwan Semiconductor. These components are designed for general-purpose voltage regulation and protection tasks. The series utilizes glass passivation technology to provide reliable performance under various electrical stress conditions common in industrial and consumer electronics.
Direct substitutes include other 200V 1W Zener diodes in the DO-41 package, such as those from ON Semiconductor or Vishay. Verify that replacement parts meet the same ±5% tolerance and thermal rating specifications to maintain circuit integrity without redesign.