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The 1M200ZHB0G is a general-purpose silicon rectifier diode manufactured by Taiwan Semiconductor Corporation. It utilizes the DO-41 axial leaded package, also designated as DO-204AL. The device is engineered for high reliability in electronic circuits requiring efficient AC to DC conversion. Key electrical specifications include a maximum average forward rectified current of 1.0 A and a repetitive peak reverse voltage rating of 200 V. The component supports a maximum non-repetitive peak forward surge current of 30 A at 8.3 ms single half-sine-wave impulse. It operates within a junction temperature range of -55°C to +175°C.
Verify the specific suffix 'ZHB0G' against official Taiwan Semiconductor documentation to confirm compliance with environmental directives such as RoHS and REACH. Ensure the ordering part number matches the required package style and marking code. Request the latest datasheet to validate current ratings and thermal characteristics before finalizing procurement specifications.
Select this component when a standard 1A rectifier with a 200V reverse voltage rating is required. The DO-41 package provides reliable through-hole mounting for PCB assembly. Consider the 175°C junction temperature limit for high-temperature environments. Verify that the forward current requirements do not exceed the 1.0 A average rating under all operating conditions.
This rectifier belongs to the 1M series of general-purpose silicon diodes from Taiwan Semiconductor. The series is designed for broad industrial and commercial applications. The DO-41 package is a standard axial leaded form factor widely used in legacy and modern electronics. The product line emphasizes cost-effectiveness combined with consistent performance metrics for mass production.
Publicly confirmed substitute part numbers are not available in the provided source material.