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The Microchip Technology 1N2807B is a high-power Zener diode designed for robust voltage regulation applications. It features a nominal Zener voltage of 9.1 V with a tolerance of ±10%. The device supports a maximum power dissipation of 50 W and operates within an extended temperature range from -65°C to +175°C. Packaged in the TO-204AD (TO-3) through-hole format, it exhibits a maximum Zener impedance of 0.4 Ohms and a reverse leakage current of 50 µA at 5.4 V. This component belongs to the JEDEC registered 1N2804B through 1N2846B series.
Verify the specific qualification level required for your application, as this series is available in JAN, JANTX, and JANTXV grades per MIL-PRF-19500/114. Confirm that the TO-204AD (TO-3) package dimensions align with your board layout constraints. Ensure the 50 W power rating is sufficient for your thermal management design, considering the derating requirements above 95°C. Cross-reference the 9.1 V nominal voltage against your circuit's regulatory needs.
Select the 1N2807B when a 9.1 V regulation point is needed with significant power handling capabilities. The TO-3 package allows for direct mounting to heat sinks, making it ideal for high-current scenarios where smaller packages would overheat. Consider the ±10% tolerance if tighter precision is not critical, or opt for higher qualification tiers like JANTXV for enhanced reliability in safety-critical systems.
This component is part of Microchip's extensive portfolio of high-power discrete semiconductors. The 1N2807B falls within the 50 Watt Zener Diode family, which includes variants ranging from 3.9 V to 200 V. These devices are engineered for durability and are often specified in legacy and modern industrial designs alike due to their proven performance and standardized JEDEC registration.
Compatible substitutes include other 50 W Zener diodes with a 9.1 V nominal voltage and TO-204AD (TO-3) packaging. Verify that any replacement matches the 0.4 Ohm maximum Zener impedance and 50 µA reverse leakage specifications. Ensure the alternative device meets the same -65°C to +175°C operating temperature range and power derating curves.