1N2835RB

Overview

The Microchip Technology 1N2835RB is a high-power Zener diode with a nominal voltage of 75 V and a maximum power dissipation of 50 W. It features a tolerance of ±5% and operates within a temperature range of -65°C to 175°C. The device utilizes a TO-204AD (TO-3) through-hole package and is hermetically sealed. Key electrical characteristics include a maximum impedance of 9 Ohms, reverse leakage current of 10 µA at 56 V, and a forward voltage of 1.5 V at 10 A.

Feature Summary

• Hermetically sealed construction for environmental protection
• High power handling capability up to 50 W
• Wide operating temperature range suitable for extreme conditions

Applications

• Military aerospace systems requiring JAN, JANTX, or JANTXV qualification levels
• High-power voltage regulation circuits
• Industrial equipment operating in harsh environments

Procurement Notes

Verify the specific suffix 'RB' against official Microchip documentation to confirm exact qualification level and testing standards. Ensure compatibility with MIL-PRF-19500/114 requirements if military-grade performance is mandated. Confirm package integrity and pin configuration prior to integration.

Selection Notes

Select this component for applications demanding robust voltage regulation under high power loads. Consider the thermal management requirements associated with the 50 W dissipation rating. Verify that the TO-204AD package fits the mechanical constraints of the target assembly.

Part Context

This part belongs to the 1N28xx series of 50 Watt Zener diodes manufactured by Microchip Technology. The series provides a broad range of voltage values from 3.9 V to 200 V. These devices are JEDEC registered and designed for reliable operation in demanding electronic environments.

Replacement Considerations

Consult official substitution guides for compatible parts within the same qualification levels. Generic equivalents may not meet the hermetic sealing or military reliability standards required by this specific part number.