1N2982RBE3

Overview

The Microchip Technology 1N2982RBE3 is a hermetically sealed, stud-mount Zener diode designed for high-power voltage regulation applications. It features an internal solder bond construction and operates with a nominal Zener voltage of 18V at a tolerance of ±5%. The device is rated for a maximum power dissipation of 10W and exhibits a maximum dynamic impedance of 4 Ohms. Constructed from silicon, it utilizes the DO-4 (DO-203AA) metal package configuration, ensuring reliable performance in demanding environments through its welded, hermetic seal.

Feature Summary

• Hermetically sealed welded construction for environmental protection
• Internal solder bond connection for mechanical stability
• Stud mount design facilitating efficient thermal management

Applications

• High-reliability voltage reference circuits
• Industrial power supply regulation
• Aerospace and defense electronic systems

Procurement Notes

Verify the specific manufacturer source, as this component family may be produced by Microchip or its predecessor entities like Microsemi. Confirm that the ordering suffix 'E3' corresponds to lead-free compliance requirements for your assembly process. Ensure the DO-4 stud mount package dimensions match your thermal interface design. Cross-reference datasheets to confirm the 18V nominal voltage and 10W power rating align with your circuit specifications before procurement.

Selection Notes

Select this component when a robust, high-power Zener diode is required for critical voltage regulation tasks. The stud mount configuration is essential for applications necessitating direct mounting to heat sinks or chassis for effective thermal dissipation. The hermetic seal makes it suitable for harsh environments where standard plastic packages would fail. Consider the 18V nominal voltage and 5% tolerance to ensure compatibility with your target regulation level and precision requirements.

Part Context

This component belongs to the 1N2982 series of high-power Zener diodes manufactured by Microchip Technology. The series offers various voltage ratings within a ruggedized metal package format. The 'RBE3' designation indicates specific polarity and lead-free manufacturing attributes. These diodes are engineered for durability and consistent electrical performance in industrial and military-grade applications requiring long-term reliability.

Replacement Considerations

Direct substitutes include other manufacturers' versions of the 1N2982B series in the DO-4 package, such as those from Central Semiconductor. Verify that any replacement maintains the 10W power rating, 18V Zener voltage, and hermetic sealing characteristics. Ensure the thermal resistance and physical mounting hole dimensions are compatible with existing heatsink interfaces.