1N2983RB

Overview

The 1N2983RB is a 10 W silicon Zener diode with a nominal voltage of 19 V. It utilizes a DO-213AA (DO-4) metal post/stud mount package and supports operation from -65 °C to +175 °C. The device features unidirectional polarity, a maximum dynamic impedance of 4 Ω, and a knee impedance of 250 Ω.

Feature Summary

• Hermetically sealed metal construction for environmental protection
• High power dissipation capability up to 10 W
• Extended temperature range suitable for harsh environments

Applications

• Voltage regulation in military systems
• Power supply protection circuits
• Harsh environment electronic assemblies

Procurement Notes

Verify the manufacturer origin, as the component is associated with Microchip Technology, Motorola/NXP, and Microsemi. Confirm the specific datasheet version matches the required tolerance and qualification level. Ensure the DO-213AA package dimensions align with the mounting requirements.

Selection Notes

Select this component for applications requiring high-power voltage reference or regulation in extreme temperatures. The stud mount design facilitates direct heat sinking. Verify that the 19 V breakdown voltage meets the circuit design specifications and that the thermal resistance allows for adequate heat dissipation at 10 W.

Part Context

This part belongs to the 1N2970 through 1N3015B series of 10 W Zener diodes. These devices are often qualified per MIL-PRF-19500/124 standards. The series provides a broad voltage range from 3.9 V to 200 V in a robust metal package designed for high reliability.

Replacement Considerations

Check for equivalents within the 1N2970–1N3015B series. Verify pinout compatibility and thermal performance if substituting with other manufacturers' DO-213AA packages.