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The Microchip Technology 1N2995B is a silicon Zener diode designed for voltage regulation applications. It features a nominal Zener voltage of 47 V with a tolerance of ±5%. The device supports a maximum power dissipation of 10 W and operates within a temperature range of -65 °C to +175 °C. Key electrical parameters include a test current of 55 mA, a maximum reverse leakage current of 10 µA at 35.8 V, and a Zener impedance of 14 Ω. The component utilizes a DO-213AA (TO-5) stud-mount package.
Verify the specific manufacturer source, as historical production may involve Microsemi or Microchip Technology. Confirm the package style matches the required mounting hardware, as stud-mount components require specific chassis preparation. Ensure compliance with RoHS directives if applicable to the final assembly environment. Cross-reference datasheets from authorized distributors to confirm current availability and exact electrical tolerances before integration.
Select this component when high power handling and precise voltage regulation are required in a compact stud-mount form factor. The 10 W rating distinguishes it from lower-power axial equivalents. Consider the thermal resistance of the mounting surface, as performance depends on effective heat dissipation. Verify that the 47 V breakdown aligns with the circuit's regulatory requirements and that the operating temperature range meets environmental specifications.
The 1N2995B belongs to the family of 10-watt silicon Zener diodes originally standardized by JEDEC. These devices are commonly used in industrial and military applications where reliability under high stress is critical. The part number follows the traditional 1N series designation, indicating its classification as a single junction semiconductor device. Manufacturing heritage includes transitions between Microsemi and Microchip Technology.
The maximum power dissipation is 10 W.
It uses a DO-213AA (TO-5) stud-mount package.