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The Microchip Technology 1N2998B is a 10-watt Zener diode designed for voltage regulation applications. It features a nominal Zener voltage of 150 V with a tolerance of ±5%. The device operates within a temperature range of -65°C to +175°C and utilizes a DO-4 (DO-203AA) axial leaded package. Key electrical characteristics include a maximum reverse leakage current of 1 µA at 135 V, a maximum Zener impedance of 10 Ohms, and a forward voltage drop of 1.5 V at 2 A.
Verify the specific qualification level (JAN, JANTX, or JANTXV) required for your application, as availability varies by grade. Confirm that the DO-4 through-hole package aligns with your PCB layout constraints. Ensure thermal management strategies are adequate for 10W dissipation. Cross-reference datasheets to confirm exact leakage and impedance limits for the selected batch.
Select this component when a 150 V regulation point is needed with high power handling capabilities. Consider the wide operating temperature range for harsh environments. Evaluate the axial leaded form factor against space limitations. Compare leakage specifications against sensitive circuit requirements to ensure compatibility with low-current designs.
The 1N2998B belongs to the 1N2970B through 1N3015B series of 10-watt Zener diodes manufactured by Microchip Technology. This series covers voltage values between 3.9 V and 200 V. These components are JEDEC registered and often utilized in military and aerospace applications due to their rigorous qualification standards under MIL-PRF-19500/124.
Compatible substitutes include other 10W Zener diodes with a 150 V rating and DO-4 package, such as those from ON Semiconductor or Vishay. Verify that replacement parts meet the same MIL-PRF-19500/124 qualification levels if environmental ruggedness is critical.