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The Microchip Technology 1N3001RB is a high-power 10 W silicon unidirectional Zener voltage regulator diode. It features a nominal reference voltage of 68 V with a maximum dynamic impedance of 18 Ohms and operates at a test current of 37 mA. The device utilizes a DO-203AA (DO-4) stud-mount package, offering a wide operating junction temperature range from -65°C to 175°C. This component is designed for robust voltage regulation in demanding environments.
Verify the specific manufacturer source, as this part number has been produced by multiple entities including Microsemi and Motorola/NXP. Confirm that the received unit matches the required JEDEC registration series and physical package dimensions. Ensure the supplier provides documentation confirming the 10 W power rating and 68 V nominal voltage specifications are met.
Select this component when a 68 V regulation point is required with significant power handling capabilities. The stud-mount package is essential for applications where thermal management is critical and PCB space is limited. Consider the 18 Ohm dynamic impedance for circuit stability requirements and ensure the mounting surface can accommodate the DO-4 form factor.
This diode belongs to the standard 1N3001 series of high-power Zener regulators. It is electrically comparable to other devices in the 1N2970 through 1N3015B series. The 'RB' suffix typically denotes a specific tolerance level, often 5%, within the broader family of 10 W silicon Zener diodes manufactured for industrial and military standards.
Direct substitutes include JAN1N3001B and 1N3001BJAN. Verify compatibility with these equivalents regarding pinout, thermal resistance, and exact voltage tolerance before implementation.