1N3006B

Overview

The Microchip Technology 1N3006B is a hermetically sealed, stud-mounted Zener diode designed for high-power voltage regulation applications. It features a nominal Zener voltage of 105 V with a tolerance of ±5% and a maximum power dissipation of 10 W. The device operates within a junction temperature range of -65°C to 175°C and utilizes internal solder bond construction. Key electrical parameters include a maximum Zener impedance of 45 Ohms at the test current, a reverse leakage current of 10 µA at 76 V, and a forward voltage drop of 1.5 V at 2 A. It is housed in a DO-203AA (DO-4) package.

Feature Summary

• Hermetically sealed welded construction for environmental reliability
• Internal solder bond interconnect technology
• High thermal stability supporting extended operating temperatures up to 175°C

Applications

• Military and aerospace voltage regulation circuits
• Industrial power supply protection systems
• High-reliability electronic equipment requiring stable reference voltages

Procurement Notes

Verify that the specific order includes the required qualification level (JAN, JANTX, or JANTXV) if applicable, as commercial versions may lack these certifications. Confirm the package type matches the mechanical requirements for stud mounting. Ensure the supplier provides traceability documentation consistent with Microchip Technology standards for this component series.

Selection Notes

Select the 1N3006B when a precise 105 V regulation point is required in high-power environments. The 10 W power rating necessitates adequate heat sinking solutions. Consider the ±5% tolerance for precision applications. Evaluate the DO-4 package dimensions against available board space and mounting hardware constraints before finalizing the design.

Part Context

This component belongs to the JEDEC registered 1N2970B through 1N3015B series of 10 Watt Zener diodes manufactured by Microchip Technology. The series covers voltage regulation values ranging from 3.9 V to 200 V. These devices are characterized by their robust silicon construction and are suitable for demanding operational conditions where standard surface-mount packages cannot dissipate sufficient heat.

Replacement Considerations

Compatible substitutes include other 1N3006B variants from different manufacturers such as America Semiconductor or MSC, provided they meet the same 105 V, 10 W, and DO-4 package specifications. Verify electrical equivalence and qualification levels before substitution.