1N3009RB

1N3009RB

$29.70
  • Description:DIODE ZENER 130V 10W DO213AA
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk

SKU:7a39ac610f16 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE ZENER 130V 10W DO213AA
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Voltage - Zener (Nom) (Vz):130 V
  • Tolerance:±5%
  • Power - Max:10 W
  • Impedance (Max) (Zzt):100 Ohms
  • Current - Reverse Leakage @ Vr:10 µA @ 98.8 V
  • Operating Temperature:-65°C ~ 175°C
  • Mounting Type:Chassis, Stud Mount
  • Package / Case:DO-203AA, DO-4, Stud
  • Voltage - Forward (Vf) (Max) @ If:1.5 V @ 2 A
  • Grade:-
  • Qualification:-

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1N3009RB

Overview

The 1N3009RB is a hermetically sealed silicon Zener diode manufactured by Microchip Technology. It features a nominal Zener voltage of 130V with a tolerance of 5% and a power dissipation rating of 10W. The device utilizes a DO-203AA (DO-4) glass axial leaded package with a single pin where the case serves as the cathode connection. It is designed for operation within an ambient temperature range of -65°C to +175°C. The component exhibits a maximum dynamic impedance of 100 Ω and is classified as unidirectional.

Feature Summary

  • Hermetic sealing in a glass axial package ensures environmental protection and reliability for critical applications.
  • High thermal capability supports continuous operation at junction temperatures up to 175°C.
  • Robust 10W power dissipation rating enables effective voltage regulation in high-power circuits.

Applications

  • High-reliability aerospace voltage regulation systems
  • Military-grade power supply overvoltage protection
  • Harsh environment industrial control circuit stabilization

Procurement Notes

Verify the specific revision level and lot traceability requirements before procurement, as hermetic sealing standards may vary by contract. Confirm that the DO-4 package dimensions align with the target PCB or chassis mounting constraints. Ensure that the supplier provides appropriate handling documentation for glass-encapsulated components to prevent mechanical damage during installation.

Selection Notes

Select this component when a high-voltage, high-power Zener reference is required in extreme temperature environments. The 130V breakdown point suits applications needing precise regulation above standard low-voltage options. The hermetic construction distinguishes it from non-sealed equivalents, making it suitable for vacuum or corrosive conditions where standard plastic packages would fail.

Part Context

This part belongs to the military-grade 1N3000 series of high-power Zener diodes produced by Microchip Technology. These devices are characterized by their rugged DO-4 glass encapsulation and wide operating temperature range. They serve as foundational discrete semiconductor components for stabilizing voltages in defense and space electronics where standard commercial parts lack sufficient durability.

Replacement Considerations

Cross-reference with other manufacturers' hermetically sealed 130V 10W Zener diodes in the DO-4 package. Verify that any substitute matches the 5% voltage tolerance and 100 Ω dynamic impedance specifications. Ensure the replacement maintains the same hermetic seal integrity and maximum operating temperature rating of 175°C.

1N3009RB1N3009RB
$29.70
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