SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Microchip Technology 1N3010B is a high-power Zener diode designed for robust voltage regulation applications. It features a nominal Zener voltage of 68 V with a tolerance of ±5%. The device is rated for a maximum DC power dissipation of 10 W at a case temperature of +95°C, utilizing a stud mount configuration in the DO-213AA package. It operates within an extended junction temperature range from -65°C to +175°C and exhibits a low reverse leakage current of 10 µA at its test current.
Verify the specific suffix requirements against the official datasheet to ensure correct tolerance and testing levels. Confirm that the mounting surface preparation meets the manufacturer's specifications for thermal interface materials. Ensure the application circuit accounts for the required power derating above +95°C case temperature to maintain reliability.
Select this component when a stable 68 V reference is required in high-current or high-noise industrial environments. Compare the 10 W power rating against the expected thermal load to determine if additional heatsinking is necessary. Evaluate the DO-213AA package constraints against the available board space and mounting hardware compatibility.
This part belongs to the 1N30xx series of high-power Zener diodes manufactured by Microchip Technology. These components are engineered for durability and stability in demanding electrical conditions. The series offers various voltage options while maintaining consistent mechanical and thermal characteristics across the product line.
Consult the official Microchip datasheet for cross-reference information. Verify that any substitute component matches the 10 W power rating, 68 V nominal voltage, and DO-213AA package dimensions.