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The Microchip Technology 1N3016B-1E3 is a 1-watt glass case Zener diode qualified per MIL-PRF-19500/115. It features a hermetically sealed DO-41 package with tungsten slugs and metallurgically bonded construction. The nominal Zener voltage is 6.8 volts at a test current of 37 mA, with a maximum dynamic impedance of 3.5 ohms at IZT and 700 ohms at IZK. Maximum reverse leakage current is 150 µA at 5.2 volts, and the temperature coefficient is 0.061 %/°C. It operates within a junction temperature range of -55°C to +175°C.
Verify that the specific ordering suffix matches the required reliability level (JAN, JANTX, or JANTXV) and RoHS compliance status. The 'e3' suffix indicates RoHS compliance available on commercial grade only; ensure the selected variant aligns with project environmental requirements. Confirm package type availability as surface mount options exist under different part numbers.
Select this component for designs requiring a 6.8-volt reference with tight tolerance and low leakage. The DO-41 through-hole package suits standard PCB layouts. Consider thermal derating curves when designing for ambient temperatures above 65°C to maintain the 1-watt power dissipation rating safely.
This device belongs to the 1N3016B-1 through 1N3045B-1 series of 1-watt Zener diodes. The series covers a voltage range from 6.8 to 110 volts in the same glass DO-41 package. Lower voltage variants are available in the 1N3821 through 1N3828 series.
Equivalent parts include the non-RoHS 1N3016B-1. Surface mount equivalents are available in the DO-213AB package under the 1N3016BUR-1 designation.
The maximum reverse leakage current is 150 µA measured at a reverse voltage of 5.2 volts.
Yes, the device is inherently radiation hard as described in Microsemi MicroNote 050.